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Preliminary
SUF-5000
Product Description
Sirenza Microdevices' SUF-5000 is a monolithically matched broadband high IP3 gain block covering 0.1 - 3.7 GHz. This pHEMT FET-based amplifier uses a patented self-bias Darlington topology featuring a gain and temperature compensating active bias network that operates from a single 5V supply. It offers efficient, cascadable performance in a compact 0.88 x 0.86 mm2 die. It is well-suited for RF, LO, and IF driver applications.
0.1-3.7 GHz, Cascadable pHEMT MMIC Amplifier Product Features
* * * * * * * *
Return Loss (dB)
Gain & Return Loss vs. Frequency (GSG Probe Data)
24 22 20 18 16 14 12 0 1 2 Frequency (Ghz) 3 4 GAIN ORL IRL 0 -5 -10 -15 -20 -25 -30
Broadband Performance High Gain = 19.0 dB @ 2 GHz P1dB = 22 dBm @ 2 GHz Low-noise, Efficient Gain Block 5V Operation, No Dropping Resistor Low Gain Variation vs. Temperature Patented Thermal Design Patented Self-Bias Darlington Circuit
Gain (dB)
Applications
* * * * *
Broadband Communications Test Instrumentation Military & Space LO and IF Mixer Applications High IP3 RF Driver Applications
Symbol
Parameters
Units
Frequency
Min.
Typ.
Max.
Gp P1dB OIP3 NF IRL ORL Isol VD ID G/T Rth, j-l
Small Signal Power Gain Output Power at 1dB Compression Output Third Order Intercept Point Noise Figure Input Return Loss Output Return Loss Reverse Isolation Device Operating Voltage Device Operating Current Gain Variation vs.Temperature Thermal Resistance (junction to backside)
dB dBm dBm dB dB dB dB V mA dB/C C/W
2 GHz 4 GHz 2 GHz 4 GHz 2 GHz 4 GHz 2 GHz 4 GHz 2 GHz 4 GHz 2 GHz 4 GHz 2 GHz 4 GHz
19.0 17.0 22.0 22.0 34.5 34.5 3.2 3.6 -19.0 -15.0 -13.0 -12.0 -24.0 -23.0 5.0 90 -0.01 133
Test Conditions: Conditions: 90mA = 5 VTone Spacing = 80 mA Typ. per tone = 0 dBm Spacing = 1 MHz, Pout per tone = 0 dBm VS OIP3 ID = 1MHz, Pout OIP3 Tone Test VS = 5.0V, ID = TL 25C, GSG Probe DataZL = 50 Ohms = 25C ZS = With Bias Tees Measured with Bias Tees ZS = ZL = 50 Ohms,
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights reserved.
303 S. Technology Ct. Broomfield, CO 80021
Phone: (800) SMI-MMIC 1
http://www.sirenza.com
EDS-105419 Rev B
Preliminary SUF-5000 0.1-3.7 GHz Cascadable MMIC Amplifier
Typical Performance (GSG Probe Data)
S21 vs. Frequency
24 22 20
21.0 25.0 P1dB vs. Frequency
23.0
18 16 14 12 0 1 2 Frequency (GHz) 3 4 0C 25C 85C
dBm
dB
19.0
25C 0C 85C
17.0
15.0 0 1 2 Frequency (GHz) 3 4
S11 vs. Frequency
0 -5 -10 dB -15 -20 -25 -30 0 1 2 Frequency (GHz) 3 4 0C 25C 85C
S22 vs. Frequency
0 -5 -10 dB -15 -20 -25 -30 0 1 2 Frequency (GHz) 3 4 0C 25C 85C
OIP3 vs. Frequency
38
Noise Figure vs. Frequency
7 6
36
5
34 dBm
dB
32 25C 30 -20C 85C 28 0 1 2 Frequency (GHz) 3 4
4 3 2 1 0 0 1 2 Frequency (GHz) 3 4 25C -20C 85C
303 S. Technology Ct. Broomfield, CO 80021
Phone: (800) SMI-MMIC 2
http://www.sirenza.com
EDS-105419 Rev B
Preliminary SUF-5000 0.1-3.7 GHz Cascadable MMIC Amplifier Typical Performance (GSG Probe Data)
Freq (GHz) 0.10 0.50 0.85 2.0 4.0 6.0 10.0
Test Conditions:
VD (V) 5 5 5 5 5 5 5
Current (mA) 90 90 90 90 90 90 90
Gain (dB) 20.5 20.0 20.0 19.0 17.0 14.0 9.0
P1dB (dBm)
OIP3 (dBm)
S11 (dB) -20.5 -21.0 -20.5 -19.0 -15.0 -13.0 -12.5
S22 (dB) -15.0 -15.0 -15.0 -13.0 -12.0 -12.0 -11.0
NF (dB)
22.0 22.0 22.0 21.0 18.5
33.0 34.5 34.5 33.0 33.0
2.7 3.2 3.6 3.7 5.2
Test Conditions: GSG Probe Data With Bias Tees, OIP3 Tone Spacing = 1MHz, Pout per tone = 0 dBm, 25C
Parameter
Max Device Current (ID) Max Device Voltage (VD) Max RF Input Power
Absolute Limit
100mA 5.5V 10dBm
Max Dissipated Power
Max Junction Temperature (TJ) Operating Temperature Range (TL) Max Storage Temp.
550mW
150C -40 to +85C -65 to +150C
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD < (TJ - TL) / RTH, j-l TL=Backside of die
Current Variation vs. Temperature
Current vs. Voltage
100 95 90 mA 85 -20C 80 75 4.75 25C 85C 4.80 4.85 4.90 4.95 5.00 VD 5.05 5.10 5.15 5.20 5.25
ELECTROSTATIC SENSITIVE DEVICE Appropriate precautions in handling, packaging and testing devices must be observed.
303 S. Technology Ct. Broomfield, CO 80021
Phone: (800) SMI-MMIC 3
http://www.sirenza.com
EDS-105419 Rev B
Preliminary SUF-5000 0.1-3.7 GHz Cascadable MMIC Amplifier
Pad Description
1
2
Pad #
Function
Description
1 2 Die Bottom
This pad is DC coupled and matched to 50 Ohms. An external DC block is required. This pad is DC coupled and matched to 50 Ohms. RFOUT / Bias Bias is applied through this pad. RFIN GND Die bottom must be connected to RF/DC ground using silver-filled conductive epoxy.
Notes: 1. All Dimensions in Inches [Millimeters]. 2. No connection required for unlabeled bond pads. 3. Die Thickness is 0.004 (0.100). 4. Typical bond pad is 0.004 (0.100) square. 5. Backside metalization: Gold. 6. Backside is Ground. 7. Bond pad metalization: Gold.
Device Assembly
+5V Interconnect Wire or Ribbon Bypass Cap(s)
Choke
50 Line
DC Block 50 Line
DC Block
3-5 mil gap
303 S. Technology Ct. Broomfield, CO 80021
Phone: (800) SMI-MMIC 4
http://www.sirenza.com
EDS-105419 Rev B

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